| PART |
Description |
Maker |
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| FDS3672 FDS3672NL |
N-Channel PowerTrench MOSFET 100V/ 7.5A/ 22m
N-Channel PowerTrench MOSFET 100V, 7.5A, 22mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 7.5A, 0.022 Ohm @ Vgs = 10V, SO-8 Package
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDS3992_04 FDS3992 FDS3992NL FDS399204 |
Dual N-Channel PowerTrench? MOSFET 100V, 4.5A, 62m?/a>
Dual N-Channel PowerTrench㈢ MOSFET 100V, 4.5A, 62mз
Discrete Commercial N-Channel PowerTrench MOSFET, 100V, 4.5A, 0.062 Ohms @ VGS = 10V, SO-8 Package
|
FAIRCHILD[Fairchild Semiconductor]
|
| M2001H |
Adjustable Carbon Attenuator, Power rating .25 watt, Temperature limits -25 degrees C to 70 degrees C, Impedance 75 ohms, 50 ohms, 60 ohms on request
|
Vishay
|
| ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| HVPS1Y5004A HVPS1Y5004B HVPS1Y5004D HVPS1Y5004F HV |
Single in line High Value Precision Discrete (50 K ohms to 10M ohms)
High Value Precision SIP
|
VISAY[Vishay Siliconix]
|
| ITH08F06G ITH08F06 ITH08F06B |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-252AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-220AB
HIGH - SPEED POWERLINE N - CHANNEL IGBT
|
MITEL[Mitel Networks Corporation]
|
| UTP45N02L-TN3-R UTP45N02L-TN3-T UTP45N02-TN3-T UTP |
45 A, 20 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 LEAD FREE PACKAGE-3
45 A, 20 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 TO-252, 3 PIN
N-CHANNEL ENHANCEMENT MODE
|
Unisonic Technologies Co., Ltd.
|
| IRF5NJ540 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*)
SURFACE MOUNT (SMD-0.5)100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
| VISHAYFOILRESISTORS-Y078554K8780T0L Y144223K2000B0 |
RS92N 23K200 0.1% - Bulk
Film/Foil Resistor, RES,RADIAL,METAL FOIL,30K OHMS,300WV,.01% /-TOL,4216 CASE
Film/Foil Resistor, RES,AXIAL,METAL FOIL,100K OHMS,500WV,.25% /-TOL,-.2,.2PPM TC
RES MTLFOL 60K OHM 0.25% 1W RDL TH - Bulk
RES MTLFOL 60K OHM 0.05% 1W RDL TH - Bulk
RES MTLFOL 60K OHM 0.01% 1W RDL TH - Bulk
RES MTLFOL 50K OHM 0.01% 1.5W 2PPM/ C AXL TH - Bulk
RES MTLFOL 50K OHM 0.005% 1.5W 2PPM/ C AXL TH - Bulk
VPG - Foil Resistors - H-Series (VHA Series & VHP202)
DSMZ 2K00/1K00 TCR 0.2 B T B W - Waffle Pack
DSMZ 100/100 TCR2 B A B W - Trays
Film/Foil Resistor, RES,AXIAL,METAL FOIL,1.17M OHMS,600WV,.02% /-TOL,-2,2PPM TC
Film/Foil Resistor, RES,RADIAL,METAL FOIL,100K OHMS,350WV,.1% /-TOL,-8,8PPM TC,8216 CASE
Film/Foil Resistor, RES,RADIAL,METAL FOIL,100K OHMS,350WV,.25% /-TOL,-8,8PPM TC,8216 CASE
Film/Foil Resistor, RES,RADIAL,METAL FOIL,100 OHMS,300WV,.01% /-TOL,-8,8PPM TC,3011 CASE
Film/Foil Resistor, RES,RADIAL,METAL FOIL,150K OHMS,300WV,1% /-TOL,-8,8PPM TC,3011 CASE
Film/Foil Resistor, RES,RADIAL,METAL FOIL,10K OHMS,300WV,.1% /-TOL,-8,8PPM TC,3011 CASE
VISY0075100R000Y29R BULK METAL FOIL VSR
Film/Foil Resistor, RES,RADIAL,METAL FOIL,150K OHMS,300WV,.05% /-TOL,-8,8PPM TC,3011 CASE
Film/Foil Resistor, RES,RADIAL,METAL FOIL,100K OHMS,500WV,.01% /-TOL,-8,8PPM TC
Film/Foil Resistor, RESISTOR, METAL FOIL, 1.5 W, 0.1 %, 0.2 ppm, 10000 ohm, THROUGH HOLE MOUNT, TO-220
RES MTLFOL 500K OHM 0.25% 3/5W RDL TH - Bulk
|
Vishay Foil Resistors
|
| CDBZ5T30100-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=100V, V-R=100V, I-O=30A
|
Comchip Technology
|
| CDBB2100LR-HF |
Halogen Free Low VF Schottky Barrier, V-RRM=100V, V-R=100V, I-O=2A
|
Comchip Technology
|
|
